型号:

NSS12501UW3T2G

RoHS:无铅 / 符合
制造商:ON Semiconductor描述:TRANS NPN 12V 7A 3-WDFN
详细参数
数值
产品分类 分离式半导体产品 >> 晶体管(BJT) - 单路
NSS12501UW3T2G PDF
产品变化通告 Wire Bond Change 07/Sept/2011
产品目录绘图 Transistor 3-WDFN
标准包装 1
系列 -
晶体管类型 NPN
电流 - 集电极 (Ic)(最大) 5A
电压 - 集电极发射极击穿(最大) 12V
Ib、Ic条件下的Vce饱和度(最大) 120mV @ 400mA,4A
电流 - 集电极截止(最大) -
在某 Ic、Vce 时的最小直流电流增益 (hFE) 200 @ 2A,2V
功率 - 最大 875mW
频率 - 转换 150MHz
安装类型 表面贴装
封装/外壳 3-WDFN 裸露焊盘
供应商设备封装 3-WDFN(2x2)
包装 剪切带 (CT)
产品目录页面 1561 (CN2011-ZH PDF)
其它名称 NSS12501UW3T2GOSCT
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